Micron Technology DRAM SDRAM-DDR, Part #: MT40A512M16LY-062E AUT:E TR | Dynamic random access memory | DEX 13"-14" 16n prefetch architecture with 256

16n prefetch architecture with 256 bits per array read or write access

8 V to 36 V 4 mm × 4 mm LFCSP and 8 mm × 6 mm QSOP packages ESD protected

4L0-910-223-G

Micron Technology DRAM SDRAM-DDR3

high-voltage (1

Micron Technology DRAM SDRAM-DDR, Part #: MT40A512M16LY-062E AUT:E TR | Dynamic random access memory | DEX 13"-14" 16n prefetch architecture with 256Micron Technology DRAM SDRAM DDR4, Part #: MT40A512M16LY 062E AUT: E TR features: VDD = VDDQ = 1. 2V 60mV VPP = 2. 5V 125mV +250mV On die, internal, adjustable VREFDQ generation 1. 2V pseudo open drain I O Refresh time of 8192 cycle at TC temperature range: 64ms at 40C to 85C 32ms at 85C to 95C 16ms at 95C to 105C 8ms at 105C to 125C 16 internal banks (x8): 4 groups of 4 banks each 8 internal banks (x16): 2 groups of 4 banks each 8n bit prefetch