Micron Technology DRAM SDRAM-DDR2, Part #: MT47H256M8EB-25E:C TR | Dynamic random access memory | DEX GE IGBT Line Side 1.5 • Available in Small-Footprint VOG48

• Available in Small-Footprint VOG48

0" FHD BENT AG 300 SLP LGD

Xiilnx FPGA Part #XC7A35T-L1FGG484I

Part #: MT41K256M16TW-107 AAT:P features: • VDD = VDDQ = 1

Micron Technology DRAM SGRAM-GDDR6

Micron Technology DRAM SDRAM-DDR2, Part #: MT47H256M8EB-25E:C TR | Dynamic random access memory | DEX GE IGBT Line Side 1.5 • Available in Small-Footprint VOG48Micron Technology DRAM SDRAM DDR2, Part #: MT47H256M8EB 25E: C TR features: VDD = 1. 8V 0. 1V, VDDQ = 1. 8V 0. 1V JEDEC standard 1. 8V I O (SSTL_18 compatible) Differential data strobe (DQS, DQS#) option 4n bit prefetch architecture Duplicate output strobe (RDQS) option for x8 DLL to align DQ and DQS transitions with CK 8 internal banks for concurrent operation Programmable CAS latency (CL) Posted CAS additive latency (AL) WRITE latency = READ latency