Micron Technology DRAM RLDRAM3, Part #MT41K128M16JT-107 IT:K TR | Dynamic random access memory | DEX FT702LT Infineon Technologies Smart Highside High

Infineon Technologies Smart Highside High Current Power Switch

Analog Devices RF Switch IC Part #ADRF5025BCCZN

Series: AVR ATmega

Description: 75V

+/-250mVOn-die

Micron Technology DRAM RLDRAM3, Part #MT41K128M16JT-107 IT:K TR | Dynamic random access memory | DEX FT702LT Infineon Technologies Smart Highside HighMicron Technology DRAM SDRAM DDR3L, Part #MT41K128M16JT 107 IT: K TR Features VDD = VDDQ = 1. 5V 0. 075V 1. 5V center terminated push pull I O Differential bidirectional data strobe 8n bit prefetch architecture Differential clock inputs (CK, CK#) 8 internal banks Nominal and dynamic on die termination (ODT) for data, strobe, and mask signals Programmable CAS READ latency (CL) Posted CAS additive latency (AL) Programmable CAS WRITE latency (CWL) based